发明名称 Projection type exposing apparatus
摘要 Alignment of a mask with a projection-type exposing apparatus and alignment of the mask with a substrate are provided. Plural exposure areas of the substrate are exposed by light of a predetermined wavelength, which is also used for alignment purposes to reduce alignment error due to aberration of a projection optical system. A first alignment mark is disposed in a first area between adjacent exposure areas of the substrate. The mask has a main area, a second area in which a second mark is disposed, and a third area in which a third mark is disposed, the second area being outside of the main area and the third area being inside the second area. An illuminating device has a first status in which the second and third areas are illuminated simultaneously and has a second status in which the third area is illuminated, a first area adjacent to one of the exposure areas also being illuminated when the illuminating device has the second status. In the first status, a first detector detects the position of an image of the second mark formed by an objective optical system. In the second status, a second detector detects displacement between images of the first and third marks formed by the objective optical system and produces a detection signal. The mask is displaced relative to the substrate in response to the detection signal, so that the images of the first and third marks assume a predetermined relationship.
申请公布号 US4801208(A) 申请公布日期 1989.01.31
申请号 US19860901587 申请日期 1986.08.29
申请人 NIKON CORPORATION 发明人 KATOH, KINYA;MATSUURA, TOSHIO
分类号 G03F9/00;H01L21/30;(IPC1-7):G01B11/27 主分类号 G03F9/00
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