| 摘要 |
<p>A ferroelectric device having a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 angstrom units to 1000 angstrom units. The process of manufacturing the ferroelectric device includes the cooling of a layer of potassium nitrate by exposing the layer to a cold dry gas without quenching to form a stable ferroelectric layer.</p> |
