| 摘要 |
PURPOSE:To obtain a device of higher integration and improved properties, by forming a field oxidized film on a substrate surface without employing the selective oxidation method, forming selectively an inversion preventing layer to the said portion and preventing oozing to the device region. CONSTITUTION:An SiO2 12, a polycrystalline Si 13 are stacked on a P type Si substrate 11, and a resist mask 14 is coated to form P<+> layer 15 by B ion implantation. After removal of the mask 14 and the evaporation of Al 16, the layer 13 is removed by a reactive ion etching. Then with the Al 16 as a mask, the SiO2 12 is etched by a reactive ion etching for an opening and the Al 16 is exfoliated. Because of the reactive ion etching, side etching on the oxidized film 12 is virtually zero. Moreover, as no oozing by ion implantation takes place on the P<+> layer, a minute device forming region as designed can be obtained. Therefore, by employing the conventional method to form a MOSFET, a device of higher integration and improved properties can be obtained. |
