| 摘要 |
PURPOSE:To attain a low impedance and a low drive voltage, to simplify its manufacturing steps and to improve the yield by executing boring processing of a diaphragm made of optically active high-molecular film formed by a spin coating method on a silicon substrate and giving a piezoelectric property. CONSTITUTION:Heated oxide films 102 and 106 of about 1,000 Angstrom in thickness are formed on the silicon substrate 101 with 100 faces orientalion. Then gold 103 is deposed 2,000 Angstrom in thickness on the silicon substrate surface. Afterward the optically active high molecular film 104 is formed in about 6mum thickness by the spin application method, and thereon gold 105 is exposed in 2,000 Angstrom thickness. Then the oxide film 106 on the back of the silicon substrate is etched to form an opening part 107, and the silicon is aeolotropically etched in an about 90 deg.C hydrazone solution to expose the oxide film 102. Then the oxide film 106 on the back and the exposed oxide film 102 are etched. Afterward the oxide film 106 at the back and the exposed oxide film 102 are etched. A DC voltage of about 600 V is impressed between gold electrodes 103 and 105 of a specimen obtained in such a way to apply boring processing, whereby the piezoelectric property is given to the high molecular film 104.
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