发明名称 |
Variable temperature semiconductor film deposition |
摘要 |
A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.
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申请公布号 |
US5712187(A) |
申请公布日期 |
1998.01.27 |
申请号 |
US19950555621 |
申请日期 |
1995.11.09 |
申请人 |
MIDWEST RESEARCH INSTITUTE |
发明人 |
LI, XIAONAN;SHELDON, PETER |
分类号 |
H01L21/203;H01L21/363;H01L31/072;H01L31/18;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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