| 摘要 |
PROBLEM TO BE SOLVED: To realize a thyristor whose surge-resistance is elevated. SOLUTION: A first n type conductive area 2 and a second n type conductive area 3 are formed on a p type semiconductor substrate 100. Each of first p type conductive areas 8, 9, 10 in the first n type conductive area 2 and each of second p type conductive areas 5, 11, 12 in the second n type conductive areas 3 are located alternately to be formed in point symmetry when seeing the semiconductor substrate 100 in plane view. Both of an interface 91 between the first n type conductive area 2 and a semiconductor substrate conductive area 1 as well as an interface 92 between the second n type conductive area 3 and the semiconductor substrate conductive area 92 are formed almost like a plane by working the ends like a table. The structure allows the uniformity of the surge current running through each of thyristor units to be elevated, thereby, each area of the thyristor units is easy to be ignited simultaneously, the surge current is easy to be shunted, thus, the surge-resistance can be improved. COPYRIGHT: (C)2004,JPO
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