Fabrication of single or multiple gate field plates

摘要

A process for fabricating single or multiple gate field plates using consecutive steps of dielectric material deposition/growth, dielectric material etch and metal evaporation on the surface of a field effect transistors. This fabrication process permits a tight control on the field plate operation since dielectric material deposition/growth is typically a well controllable process. Moreover, the dielectric material deposited on the device surface does not need to be removed from the device intrinsic regions: this essentially enables the realization of field-plated devices without the need of low-damage dielectric material dry/wet etches. Using multiple gate field plates also reduces gate resistance by multiple connections, thus improving performances of large periphery and/or sub-micron gate devices.

主权项

1. A method of fabricating one or more gate field plates, comprising:
providing a dielectric material layer directly on an active region and directly on a gate of a device; etching the dielectric material layer; and evaporating metal onto the dielectric material layer, after etching the dielectric material layer, to create at least one field plate, wherein: (i) none of the dielectric material layer provided on the active region of the device is removed to expose the active region; (ii) the at least one field plate is created on the dielectric material layer and at least overlaps the gate above the active region; and (iii) the gate is directly on the active region.