| 摘要 |
The bipolar transistor manufacturing method is comprised of the structure, wherein an active area(36) of an element is formed on center portion of a substrate by the selective epitaxial layer growing method, a part of the polycrystalline silicon layer(38), a buried layer, which operates as a sub collector and is connected to a epitaxial layer(36), the active area, extrinsic base layers(31,34) is formed in an upper part of the epitaxial layer(36), a complete element isolation being made by an insulating film(315) and in addition, the polycrystalline silicon layer(38) being insulated electrically from SOI(Silicon On Insulator) substrate(311), an intrinsic base(312) and an emitter(33) of a bipolar element being formed, respectively, by the self-alignment, on the silicon epitaxial layer(36), the active area.
|
