发明名称 METHOD OF POSITION DETECTION
摘要 PURPOSE:To defect the position of a wafer at high S/N ratio and high accuracy by using a V-form recess having a specified angle provided on the main surface of the wafer as a mask, radiating radiation through the mark perpendicularly from the underside of the wafer and from the change in the quantity of its transmission.
申请公布号 JPS5376054(A) 申请公布日期 1978.07.06
申请号 JP19760150897 申请日期 1976.12.17
申请人 HITACHI LTD;NIPPON TELEGRAPH & TELEPHONE;NIPPON ELECTRIC CO;FUJITSU LTD 发明人 TAKEMOTO KAYAO;MIYAZAKI MASARU;NAKAYAMA SATORU;MIMURA YOSHIAKI;MATSUI JIYUNJI;SHIRATORI TAKANAO
分类号 G01D5/26;G01B11/00;G01D5/347;H01L21/027;H01L21/68 主分类号 G01D5/26
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