| 摘要 |
PURPOSE:To control impurity concentration, and to form a thin-film semiconductor having desired electrical characteristics by accelerating the ions of the simple substance or compound of a substance as the raw material of a semiconductor thin-film and the ions of the simple substance or compound of an impurity as a doner or an acceptor to said semiconductor thin-film and irradiating a sample heated. CONSTITUTION:A sample to which a polycrystalline silicon thin-film is shaped is positioned into a vacuum vessel kept at a high vacuum of 10<-3>Torr or less, silicon ions 4 and boron ions 5 are accelerated and said sample is irradiated with the ions at the same time, and a section near the surface of the sample is brought to an amorphous state while an impurity is implanted, thus forming an amorphous silicon layer 3. The impurity is diffused and activated and P-type polycrystalline silicon 7 shaped is solid-grown by heating by a heater 6 when the ions are implanted. Electromagnetic waves such as microwaves, laser beams, X-rays, etc. and electron rays are applied in place of the heater 6, and only the section near the surface of the sample, to which the impurity is implanted and which is brought to the amorphous state, is heated partially, thus also acquiring the same effect.
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