SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, the stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction through the stacked body. The semiconductor body includes an upper end portion protruding above the stacked body. The stacked film is provided between the semiconductor body and the electrode layers. The stacked film includes a charge storage portion. The conductor is provided at an upper surface and a side surface of the upper end portion of the semiconductor body. The conductor electrically contacts the upper surface and the side surface. The interconnect is provided above the conductor. The interconnect is electrically connected to the conductor.

主权项

1: A semiconductor device, comprising:
a substrate; a stacked body provided above the substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed; a semiconductor body extending in a stacking direction through the stacked body, the semiconductor body including an upper end portion protruding above the stacked body; a stacked film provided between the semiconductor body and the electrode layers, the stacked film including a charge storage portion; a conductor provided at an upper surface and an outer side surface of the upper end portion of the semiconductor body in one body, the conductor electrically contacting the upper surface and the outer side surface; and an interconnect provided above the conductor, the interconnect being electrically connected to the conductor.