发明名称 |
Chip-on-Substrate Packaging on Carrier |
摘要 |
A method includes mounting a wafer-level package substrate over a carrier, and pre-cutting the wafer-level package substrate to form trenches extending from a top surface of the wafer-level package substrate into the wafer-level package substrate. A plurality of dies is bonded over the wafer-level package substrate. The plurality of dies is molded in a molding material to form a wafer-level package, with the wafer-level package including the wafer-level package substrate, the plurality of dies, and the molding material. The carrier is detached from the wafer-level package. The wafer-level package is sawed into a plurality of packages, with each of the plurality of packages including a portion of the wafer-level package substrate and one of the plurality of dies. |
申请公布号 |
US2017098617(A1) |
申请公布日期 |
2017.04.06 |
申请号 |
US201615379769 |
申请日期 |
2016.12.15 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yu Chen-Hua;Sheu Tzu-Shiun;Jeng Shin-Puu;Tai Shih-Peng;Su An-Jhih;Wu Chi-Hsi |
分类号 |
H01L23/00;H01L21/56;H01L25/065;H01L25/00;H01L23/498;H01L23/31;H01L21/48;H01L21/78 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
pre-cutting a wafer-level package substrate to form trenches, wherein the wafer-level package substrate comprises:
a core dielectric layer;conductive pipes penetrating through the core dielectric layer;a first dielectric layer overlying and contacting the core dielectric layer, wherein the trenches extend from a top surface of the wafer-level package substrate to at least a bottom surface of the first dielectric layer; anda second dielectric layer underlying the core dielectric layer, wherein the first dielectric layer and the second dielectric layer form distinguishable interfaces with the core dielectric layer; bonding a plurality of dies over the wafer-level package substrate; encapsulating the plurality of dies in an encapsulating material to form a wafer-level package; and sawing the wafer-level package into a plurality of packages, with each of the plurality of packages comprising a portion of the wafer-level package substrate and one of the plurality of dies. |
地址 |
Hsin-Chu TW |