发明名称 Chip-on-Substrate Packaging on Carrier
摘要 A method includes mounting a wafer-level package substrate over a carrier, and pre-cutting the wafer-level package substrate to form trenches extending from a top surface of the wafer-level package substrate into the wafer-level package substrate. A plurality of dies is bonded over the wafer-level package substrate. The plurality of dies is molded in a molding material to form a wafer-level package, with the wafer-level package including the wafer-level package substrate, the plurality of dies, and the molding material. The carrier is detached from the wafer-level package. The wafer-level package is sawed into a plurality of packages, with each of the plurality of packages including a portion of the wafer-level package substrate and one of the plurality of dies.
申请公布号 US2017098617(A1) 申请公布日期 2017.04.06
申请号 US201615379769 申请日期 2016.12.15
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Yu Chen-Hua;Sheu Tzu-Shiun;Jeng Shin-Puu;Tai Shih-Peng;Su An-Jhih;Wu Chi-Hsi
分类号 H01L23/00;H01L21/56;H01L25/065;H01L25/00;H01L23/498;H01L23/31;H01L21/48;H01L21/78 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method comprising: pre-cutting a wafer-level package substrate to form trenches, wherein the wafer-level package substrate comprises: a core dielectric layer;conductive pipes penetrating through the core dielectric layer;a first dielectric layer overlying and contacting the core dielectric layer, wherein the trenches extend from a top surface of the wafer-level package substrate to at least a bottom surface of the first dielectric layer; anda second dielectric layer underlying the core dielectric layer, wherein the first dielectric layer and the second dielectric layer form distinguishable interfaces with the core dielectric layer; bonding a plurality of dies over the wafer-level package substrate; encapsulating the plurality of dies in an encapsulating material to form a wafer-level package; and sawing the wafer-level package into a plurality of packages, with each of the plurality of packages comprising a portion of the wafer-level package substrate and one of the plurality of dies.
地址 Hsin-Chu TW