发明名称 SUBSTRATE PROCESSING APPARATUS AND CLEANING METHOD OF PROCESSING CHAMBER
摘要 A drying time after cleaning a surface of a cleaning target including a wall which constitutes a processing chamber of a substrate processing apparatus and a device provided within the processing chamber can be shortened. After performing a cleaning process of dissolving a removal target adhering to the surface of the cleaning target with water by discharging the water into the processing chamber 20 and allowing the surface of the cleaning target 42, 20a and 53 to be wet with the water, a solvent supplying process of supplying a solvent having higher volatility than the water toward the water adhering to the surface of the cleaning target is performed by discharging the solvent into the processing chamber. Then, a drying process of drying the surface of the cleaning target is performed.
申请公布号 US2017084470(A1) 申请公布日期 2017.03.23
申请号 US201615263451 申请日期 2016.09.13
申请人 Tokyo Electron Limited 发明人 Suzuki Hiroyuki;Otsuka Takahisa;Tateyama Kiyohisa;Nakazawa Takashi
分类号 H01L21/67;F26B3/20;B08B3/10;B08B3/08;B08B9/08 主分类号 H01L21/67
代理机构 代理人
主权项 1. A substrate processing apparatus, comprising: a processing chamber; a substrate holding unit provided within the processing chamber and configured to hold a substrate; a processing liquid nozzle configured to supply a processing liquid onto the substrate held by the substrate holding unit; and a cleaning fluid discharging unit configured to discharge water for cleaning a cleaning target within the processing chamber and a solvent having higher volatility than the water into an internal space of the processing chamber.
地址 Tokyo JP