发明名称 Thin film transistor array substrate, organic light-emitting display apparatus, and method of manufacturing the thin film transistor array substrate
摘要 A thin film transistor array substrate includes a thin film transistor including a first gate electrode, an active layer, a source electrode, and a drain electrode. A first conductive layer pattern is on a same layer as the source electrode and the drain electrode and formed of a same material as the source electrode and the drain electrode. An insulating layer is on the first conductive layer pattern and has an opening exposing a patterning cross-section of the first conductive layer pattern. A pixel electrode is on the insulating layer and is coupled to the source electrode or the drain electrode through a contact hole passing through the insulating layer. A diffusion prevention layer covers the patterning cross-section of the first conductive layer pattern and inclined side surfaces of the insulating layer exposed through the opening.
申请公布号 US9601527(B2) 申请公布日期 2017.03.21
申请号 US201414538739 申请日期 2014.11.11
申请人 Samsung Display Co., Ltd. 发明人 Kang Jae-Wook
分类号 H01L29/08;H01L35/24;H01L51/00;H01L27/12;H01L23/532;H01L27/32 主分类号 H01L29/08
代理机构 Lewis Roca Rothgerber Christie LLP 代理人 Lewis Roca Rothgerber Christie LLP
主权项 1. A thin film transistor array substrate comprising: a thin film transistor comprising a gate electrode, an active layer, a source electrode, and a drain electrode; a first conductive layer pattern on a same layer as the source electrode and the drain electrode and formed of a same material as the source electrode and the drain electrode; an insulating layer on the first conductive layer pattern, the insulating layer having an opening exposing a patterning cross-section of the first conductive layer pattern; a pixel electrode on the insulating layer and coupled to either the source electrode or the drain electrode through a contact hole passing through the insulating layer; and a diffusion prevention layer covering the patterning cross-section of the first conductive layer pattern and inclined side surfaces of the insulating layer exposed through the opening.
地址 Yongin-si KR