发明名称 |
Thin film transistor array substrate, organic light-emitting display apparatus, and method of manufacturing the thin film transistor array substrate |
摘要 |
A thin film transistor array substrate includes a thin film transistor including a first gate electrode, an active layer, a source electrode, and a drain electrode. A first conductive layer pattern is on a same layer as the source electrode and the drain electrode and formed of a same material as the source electrode and the drain electrode. An insulating layer is on the first conductive layer pattern and has an opening exposing a patterning cross-section of the first conductive layer pattern. A pixel electrode is on the insulating layer and is coupled to the source electrode or the drain electrode through a contact hole passing through the insulating layer. A diffusion prevention layer covers the patterning cross-section of the first conductive layer pattern and inclined side surfaces of the insulating layer exposed through the opening. |
申请公布号 |
US9601527(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201414538739 |
申请日期 |
2014.11.11 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Kang Jae-Wook |
分类号 |
H01L29/08;H01L35/24;H01L51/00;H01L27/12;H01L23/532;H01L27/32 |
主分类号 |
H01L29/08 |
代理机构 |
Lewis Roca Rothgerber Christie LLP |
代理人 |
Lewis Roca Rothgerber Christie LLP |
主权项 |
1. A thin film transistor array substrate comprising:
a thin film transistor comprising a gate electrode, an active layer, a source electrode, and a drain electrode; a first conductive layer pattern on a same layer as the source electrode and the drain electrode and formed of a same material as the source electrode and the drain electrode; an insulating layer on the first conductive layer pattern, the insulating layer having an opening exposing a patterning cross-section of the first conductive layer pattern; a pixel electrode on the insulating layer and coupled to either the source electrode or the drain electrode through a contact hole passing through the insulating layer; and a diffusion prevention layer covering the patterning cross-section of the first conductive layer pattern and inclined side surfaces of the insulating layer exposed through the opening. |
地址 |
Yongin-si KR |