| 发明名称 |
SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN RELEASE IN GATE REGIONS |
| 摘要 |
A method of introducing strain in a channel region of a FinFET device includes forming a fin structure on a substrate, the fin structure having a lower portion comprising a sacrificial layer and an upper portion comprising a strained semiconductor layer; and removing a portion of the sacrificial layer corresponding to a channel region of the FinFET device so as to release the upper portion of the fin structure from the substrate in the channel region. |
| 申请公布号 |
US2017053839(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
US201514953519 |
申请日期 |
2015.11.30 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cheng Kangguo;Doris Bruce B.;Khakifirooz Ali;Lu Darsen D.;Reznicek Alexander;Rim Kern |
| 分类号 |
H01L21/84;H01L21/8238;H01L21/324;H01L29/10;H01L21/32;H01L29/161;H01L21/02;H01L29/66;H01L21/033 |
主分类号 |
H01L21/84 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of introducing strain in a channel region of a FinFET device, the method comprising:
forming a fin structure on a substrate, the fin structure having a lower portion comprising a sacrificial layer and an upper portion comprising a strained semiconductor layer; and removing a portion of the sacrificial layer corresponding to a channel region of the FinFET device so as to release the upper portion of the fin structure from the substrate in the channel region. |
| 地址 |
ARMONK NY US |
