| 摘要 |
The present invention relates to a complex for gas detection which exhibits stable and reliable detection performance even in a humid environment, a method for manufacturing the same, a gas sensor comprising the complex for gas detection as a gas sensing layer, and a method for manufacturing the same and, more specifically, to a complex for gas detection comprising: a nanostructure of an oxide semiconductor selected from a group consisting of SnO2, ZnO, WO3, NiO, and In2O3; and a CeO2 additive supported on the nanostructure, a method of manufacturing the same, a gas sensor comprising the complex for gas detection as a gas sensing layer, and a method of manufacturing the same. The present invention provides a complex for gas detection capable of rapidly detecting a gas to be detected with high sensitivity, regardless of the presence or concentration of moisture, by means of an oxide semiconductor nanostructure to which CeO2 is uniformly added; a gas sensor comprising the complex for gas detection as a gas sensing layer; and a method for manufacturing the same. |
