| 发明名称 |
Semiconductor device having a plurality of source lines being laid in both X and Y directions |
| 摘要 |
A device is disclosed. The device includes a semiconductor substrate, a plurality of source lines formed on a surface of the semiconductor substrate. The plurality of source lines are laid in both X and Y directions. The device further includes a plurality of gate lines laid out over source lines in X direction in the plurality of source lines, a source contact line that connects source lines in the plurality of source lines that are terminating in Y direction, a gate contact line that connects the plurality of gate lines and a drain contact. |
| 申请公布号 |
US9570605(B1) |
申请公布日期 |
2017.02.14 |
| 申请号 |
US201615150225 |
申请日期 |
2016.05.09 |
| 申请人 |
NXP B.V. |
发明人 |
Peake Steven Thomas |
| 分类号 |
H01L29/423;H01L29/78;H01L29/10;H01L27/02;H01L29/66 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
Madnawat Rajeev |
| 主权项 |
1. A device comprising:
a semiconductor substrate; a plurality of source lines formed on a surface of the semiconductor substrate, wherein the plurality of source lines are laid in both X and Y directions; a plurality of gate lines laid out over source lines in X direction in the plurality of source lines; a source contact line that connects source lines in the plurality of source lines that are terminating in Y direction; a gate contact line that connects the plurality of gate lines; and a drain contact. |
| 地址 |
Eindhoven NL |
