| 摘要 |
This production method for a semiconductor device is provided with: a step (A) for preparing a stacked body in which a semiconductor chip is fixed upon a support body; a step (B) for preparing a sealing sheet provided with a hard layer having a minimum melt viscosity at 25-200˚C of at least 10000 Pa∙s, and an embedding resin layer having a minimum melt viscosity at 25-200 ˚C within the range of 50-9000 Pa∙s; a step (C) in which the semiconductor chip is embedded in the embedding resin layer of the sealing sheet to form a sealed body in which the semiconductor chip is embedded in the sealing sheet; and a step (D) which is performed after step (C), and in which the sealing sheet is thermally cured. |
