APPARATUS AND METHOD FOR LIGHT-IRRADIATION HEAT TREATMENT

摘要

Light is applied for preheating from a halogen lamp to a lower surface of a semiconductor wafer supported on a susceptor within a chamber. Thereafter, flash light is applied for flash heating from a flash lamp to an upper surface of the semiconductor wafer. Treatment gas supplied from a gas supply source is heated by a heater, and supplied into the chamber. A flow amount control valve is provided to increase a flow amount of the treatment gas supplied into the chamber. Contaminants discharged from a film of the semiconductor wafer during heat treatment are discharged to the outside of the chamber with a gas flow formed by a large amount of high-temperature treatment gas supplied into the chamber to reduce contamination inside the chamber.

主权项

1. A heat treatment apparatus that heats a substrate by irradiating the substrate with light, comprising:
a chamber that accommodates the substrate; a susceptor provided in said chamber and supporting the substrate; a light irradiation part that applies light to the substrate supported on said susceptor; a gas supply part that supplies treatment gas into said chamber; and a gas heater that heats said treatment gas supplied from said gas supply part to said chamber.