| 摘要 |
A terahertz modulator according to the present invention can comprise: a substrate; a first metal provided on the substrate; a second metal provided on the substrate; at least three contact points with which the first metal and the second metal indirectly come in contact; and at least one resonator for adjusting the transmission of terahertz waves, as a closed circuit including the first metal, the second metal, and the at least three contact points. According to the present invention, a modulation index can be increased by 80%, a modulation bandwidth can be increased in GHz, and an operating voltage can be lowered. |
