Manufacturing method of semiconductor device that includes forming plural nitride semiconductor layers of identical material

摘要

According to one embodiment, a manufacturing method of a semiconductor device, comprising: forming a first nitride semiconductor layer on a substrate using a first temperature; decreasing a substrate temperature to a second temperature lower than the first temperature, after the forming the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer using the second temperature; increasing the substrate temperature to a third temperature higher than the first temperature, after the forming the second nitride semiconductor layer; and forming a third nitride semiconductor layer on the second nitride semiconductor layer using the third temperature.

主权项

1. A manufacturing method of a semiconductor device, comprising:
forming a first nitride semiconductor layer on a substrate using a first temperature; decreasing a substrate temperature to a second temperature lower than the first temperature, after the forming the first nitride semiconductor layer; forming a second nitride semiconductor layer on the first nitride semiconductor layer using the second temperature, the second nitride semiconductor layer formed of a material identical to a material of the first nitride semiconductor layer; increasing the substrate temperature to a third temperature higher than the first temperature, after the forming the second nitride semiconductor layer; and forming a third nitride semiconductor layer on the second nitride semiconductor layer using the third temperature, the third nitride semiconductor layer formed of a material identical to the material of the first nitride semiconductor layer.