发明名称 SUBSTRATE PROCESSING DEVICE, PRODUCTION METHOD OF SEMICONDUCTOR, AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing device, a production method of a semiconductor, and a program, by which uniform cleaning with no irregular spot is achieved.SOLUTION: A process chamber 202 includes: a processing chamber 203 for processing a substrate 200; a substrate placing table 220 provided in the processing chamber 203 for placing a plurality of substrates 200 in a circular form; a rotating part 225 for rotating the substrate placing table 220; a first gas supplying structure 241 for supplying first gas from upper side of the substrate placing table 220; a second gas supplying structure 261a for supplying second gas from upper side of the substrate placing table 220; a third gas supplying part for supplying cleaning gas from upper side of the substrate placing table 220; and a lifting part 222 for controlling that the substrate placing table 220 is kept in a substrate processing position while the first gas and the second gas are supplied, and the substrate placing table 220 is kept in a cleaning position, while the cleaning gas is supplied.SELECTED DRAWING: Figure 3
申请公布号 JP2016102242(A) 申请公布日期 2016.06.02
申请号 JP20140241360 申请日期 2014.11.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 UEDA TATESHI
分类号 C23C16/44;H01L21/31 主分类号 C23C16/44
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