| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a mask blank for EUVL which have excellent in-plane uniformity of peak reflectance of light in an EUV wavelength region and excellent in-plane uniformity of a center wavelength of reflected light in the EUV wavelength region on a surface of a multilayer reflective film, a substrate for a reflective layer for EUVL, and a manufacturing method thereof.SOLUTION: There is provided a substrate with a reflective layer for EUV lithography (EUVL), in which the reflective layer is a multilayer reflective film formed by laminating a low refractive index layer and a high refractive index layer alternately for plural times. Out of the layers constituting the multilayer reflective film, at least any one layer out of at least a pair of the low refractive index layer and the high refractive index layer which are adjacent to each other is a reflectance distribution correction layer, and the reflectance distribution correction layer has film thickness distribution that satisfies the following expression (1) in a radial direction from the center of substrate. -0.011x+0.1x+100-α≤y≤-0.011x+0.1x+100+α(1), (x denotes relative position in a radial direction from the center to an outer end of the substrate. y denotes a changing rate of a film thickness variation of the reflectance distribution correction layer. α denotes 25.).SELECTED DRAWING: Figure 5 |
