| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of achieving a high luminous efficiency in a short wavelength region (yellow emission) while using an active layer of a quantum well structure.SOLUTION: In a semiconductor light emitting element including a quantum well active layer comprising a well layer and a barrier layer, the emission wavelength of the semiconductor light emitting element is 585 nm or more and 605 nm or less, the well layer is formed of a compound semiconductor represented by a composition formula: (AlGa)InP (0<x≤0.06, 0<y<1), and the barrier layer is formed of a compound semiconductor represented by a composition formula: (AlGa)InP (0≤m≤1, 0<n<1).SELECTED DRAWING: Figure 1 |
