METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE

摘要

According to one embodiment, a method for manufacturing a semiconductor memory device includes simultaneously forming a plurality of first holes and a plurality of second holes in a stacked body. The stacked body includes a plurality of first layers and a plurality of second layers. The method includes etching a portion between the second holes next to each other in the stacked body, and connecting at least two or more second holes to form a groove. The method includes forming a film including a charge storage film on a sidewall of the first holes. The method includes forming a channel film on a sidewall of the film including the charge storage film.

主权项

1. A method for manufacturing a semiconductor memory device, comprising:
simultaneously forming a plurality of first holes and a plurality of second holes in a stacked body, the first holes and the second holes being periodically arrayed, the stacked body including a plurality of first layers and a plurality of second layers, each of the second layers provided between the first layers; etching a portion between the second holes next to each other in the stacked body, and connecting at least two or more second holes to form a groove; forming a film including a charge storage film on a sidewall of the first holes; and forming a channel film on a sidewall of the film including the charge storage film.