发明名称 Nitride semiconductor laser element
摘要 Provided is a highly reliable nitride semiconductor laser element having a robust end face protection film not being peeled even in laser operation. The nitride semiconductor laser element includes: a semiconductor multi-layer structure including a group III nitride semiconductor and having a light-emitting end face; and a protection film including a dielectric multi-layer film and covering the light-emitting end face of the semiconductor multi-layer structure. The protection film includes an end face protection layer and an oxygen diffusion suppression layer arranged sequentially in stated order from the light-emitting end face. The end face protection layer includes a crystalline film comprising nitride including aluminum. The oxygen diffusion suppression layer has a structure in which a metal oxide film is between silicon oxide films. The metal oxide film is crystallized by laser light.
申请公布号 US9312659(B2) 申请公布日期 2016.04.12
申请号 US201414556195 申请日期 2014.11.30
申请人 Panasonic Intellectual Property Management Co., Ltd. 发明人 Yoshida Shinji;Mochida Atsunori;Okaguchi Takahiro
分类号 H01S5/00;H01S5/028;H01S5/30;H01S5/323;H01S5/343;H01S5/068;B82Y20/00 主分类号 H01S5/00
代理机构 Panasonic Patent Center 代理人 Panasonic Patent Center
主权项 1. A nitride semiconductor laser element comprising: a semiconductor laminate made of a group III nitride semiconductor and including a light-emitting end surface; and a protection film formed of a dielectric multilayer film formed to cover the light-emitting end surface of the semiconductor laminate, wherein the protection film includes an end surface protection layer and an oxygen diffusion suppressing layer, and the end surface protection layer and the oxygen diffusion suppressing layer are disposed in order of the end surface protection layer and the oxygen diffusion suppressing layer from a side of the light-emitting end surface; the end surface protection layer is a layer including a crystalline aluminum nitride film; the oxygen diffusion suppressing layer includes at least a single layer of a metal oxide film and at least a single layer of a silicon oxide film, and the silicon oxide film and the metal oxide film are disposed in this order from a side of the end surface protection layer; and the metal oxide film is crystallized by laser light emitted from the light-emitting end surface, and the metal oxide film is aluminum oxide film.
地址 Osaka JP