发明名称 |
Read Retry For Non-Volatile Memories |
摘要 |
An apparatus for reading a non-volatile memory includes a tracking module operable to calculate means and variances of voltage level distributions in a non-volatile memory and to calculate at least one reference voltage to be used when reading the non-volatile memory based on the means and variances, a likelihood generator operable to calculate at least one other reference voltage to be used when reading the non-volatile memory, wherein the at least one other reference voltage is based at least in part on a predetermined likelihood value constellation, and to map read patterns from the non-volatile memory to likelihood values, and a read controller operable to read the non-volatile memory using the at least one reference voltage and the at least one other reference voltage to yield the read patterns. |
申请公布号 |
US2016093396(A1) |
申请公布日期 |
2016.03.31 |
申请号 |
US201514961865 |
申请日期 |
2015.12.07 |
申请人 |
Seagate Technology LLC |
发明人 |
Alhussien AbdelHakim S;Haratsch Erich F;Sankaranarayanan Sundararajan;Wu YingQuan |
分类号 |
G11C16/28;G11C29/42;G11C16/08;G11C16/26;G11C29/02 |
主分类号 |
G11C16/28 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
a circuit configured to:
adjust a read voltage of a non-volatile solid state memory based on an estimate of voltage distributions of the non-volatile solid state memory; andperform a read, utilizing the read voltage, of a memory cell of the non-volatile solid state memory. |
地址 |
Cupertino CA US |