发明名称 Read Retry For Non-Volatile Memories
摘要 An apparatus for reading a non-volatile memory includes a tracking module operable to calculate means and variances of voltage level distributions in a non-volatile memory and to calculate at least one reference voltage to be used when reading the non-volatile memory based on the means and variances, a likelihood generator operable to calculate at least one other reference voltage to be used when reading the non-volatile memory, wherein the at least one other reference voltage is based at least in part on a predetermined likelihood value constellation, and to map read patterns from the non-volatile memory to likelihood values, and a read controller operable to read the non-volatile memory using the at least one reference voltage and the at least one other reference voltage to yield the read patterns.
申请公布号 US2016093396(A1) 申请公布日期 2016.03.31
申请号 US201514961865 申请日期 2015.12.07
申请人 Seagate Technology LLC 发明人 Alhussien AbdelHakim S;Haratsch Erich F;Sankaranarayanan Sundararajan;Wu YingQuan
分类号 G11C16/28;G11C29/42;G11C16/08;G11C16/26;G11C29/02 主分类号 G11C16/28
代理机构 代理人
主权项 1. A device comprising: a circuit configured to: adjust a read voltage of a non-volatile solid state memory based on an estimate of voltage distributions of the non-volatile solid state memory; andperform a read, utilizing the read voltage, of a memory cell of the non-volatile solid state memory.
地址 Cupertino CA US