发明名称 LOW-TEMPERATURE PASSIVATION OF FERROELECTRIC INTEGRATED CIRCUITS FOR ENHANCED POLARIZATION PERFORMANCE
摘要 Curing of a passivation layer (60) is applied to the surface of a ferroelectric integrated circuit to enhance the polarization characteristics of ferroelectric structures (55). A passivation layer (60), such as a polyimide, is applied to the surface of the ferroelectric integrated circuit after fabrication of the active devices. The passivation layer (60) is cured by exposure to a high temperature, below the Curie temperature of ferroelectric material (62), for a short duration such as on the order of ten minutes. Variable frequency microwave energy may be used to effect such curing. The cured passivation layer (60) attains a tensile stress state, and as a result imparts a compressive stress upon the underlying ferroelectric material (62). Polarization may be further enhanced by polarizing the ferroelectric material (62) before the cure process.
申请公布号 WO2016049084(A1) 申请公布日期 2016.03.31
申请号 WO2015US51552 申请日期 2015.09.22
申请人 TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED 发明人 WEN, HUANG-CHUN;BAILEY, RICHARD, ALLEN;ACOSTA, ANTONIO, GUILLERMO;RODRIGUEZ, JOHN, A.;SUMMERFELT, SCOTT, ROBERT;SAN, KEMAL, TAMER
分类号 H01L27/115;H01G7/06 主分类号 H01L27/115
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