发明名称 Semiconductor device structures comprising a polymer bonded to a base material and methods of fabrication
摘要 Methods for adhering materials and methods for enhancing adhesion between materials are disclosed. In some embodiments, a polymer brush material is bonded to a base material, and a developable polymer resist material is applied over the grafted polymer brush material. The resist material is at least partially miscible in the grafted polymer brush material. As such, the resist material at least partially dissolves within the grafted polymer brush material to form an intertwined material of grafted polymer brush macromolecules and resist polymer macromolecules. Adhesion between the developable polymer resist and the base material may be thereby enhanced. Also disclosed are related semiconductor device structures.
申请公布号 US9293328(B2) 申请公布日期 2016.03.22
申请号 US201414276204 申请日期 2014.05.13
申请人 Micron Technology, Inc. 发明人 Millward Dan B.
分类号 G03F7/038;H01L21/033;H01L21/027;G03F7/039;G03F7/09;G03F7/11;G03F7/16;H01L29/02 主分类号 G03F7/038
代理机构 TraskBritt 代理人 TraskBritt
主权项 1. A semiconductor device structure, comprising: a base material over a semiconductor substrate, the base material comprising at least one functional group bonded to at least one reactive group of a polymer material on the base material; and another polymer material at least partially dissolved within the polymer material, the other polymer material and the polymer material formed from identical monomers.
地址 Boise ID US