| 发明名称 |
SUB-LITHOGRAPHIC PATTERNING OF MAGNETIC TUNNELING JUNCTION DEVICES |
| 摘要 |
A method for fabricating a magnetic tunnel junction (MTJ) device includes creating a recess within a second patterning layer, in which a first patterning layer overhangs the recessed second patterning layer. Such a method further includes depositing a film into the recess to create a keyhole pattern within the deposited film. The method further includes transferring the keyhole pattern through a hard mask layer to an MTJ stack. The method also includes depositing a conductive material into the transferred keyhole pattern and on an MTJ stack. The method also includes removing the hard mask layer to create a conductive hard mask pillar. |
| 申请公布号 |
US2016079307(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201414483919 |
申请日期 |
2014.09.11 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
LU Yu |
| 分类号 |
H01L27/22;H01L43/08;H01L43/12;H01L43/02 |
主分类号 |
H01L27/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a magnetic tunnel junction (MTJ) device, comprising:
creating a recess within a second patterning layer, in which a first patterning layer overhangs the recessed second patterning layer; depositing a film into the recess to create a keyhole pattern within the deposited film; transferring the keyhole pattern through a hard mask layer to an MTJ stack; depositing a conductive material into the transferred keyhole pattern and on the MTJ stack; and removing the hard mask layer to create a conductive hard mask pillar. |
| 地址 |
San Diego CA US |
