发明名称 PHYSICAL QUANTITY SENSOR
摘要 For a small sensor produced through a MEMS process, when an electrode pad, wiring, or a shield layer is formed in a final step, it is difficult to nondestructively investigate whether a structure for sensing a physical quantity has been processed satisfactorily. In the present invention, in a physical quantity sensor formed from an MEMS structure, in a structure in which a surface electrode having through wiring is formed on the surface of an electrode substrate and the periphery thereof is insulated, forming a shield layer comprising a metallic material on the surface of the electrode substrate in a planar view and providing a space for internal observation inside the shield layer makes it possible to check for internal defects.
申请公布号 WO2016038984(A1) 申请公布日期 2016.03.17
申请号 WO2015JP68606 申请日期 2015.06.29
申请人 HITACHI AUTOMOTIVE SYSTEMS, LTD. 发明人 KANAMARU MASATOSHI;HAYASHI MASAHIDE;YURA MASASHI;JEONG HEEWON
分类号 G01P21/00;B81B3/00;G01P15/08;G01P15/125;H01L29/84 主分类号 G01P21/00
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