The objective of the present invention is to provide a semiconductor device which can reduce damage of a transistor in case external force like bending is applied to generate stress. The semiconductor device has a first island shaped reinforcing film which is formed on a first flexible substrate; a semiconductor film which comprises a channel forming region and an impurity region on the first island shaped reinforcing film; a first conductive film which is formed by intervening a gate insulation film on an upper side of the channel forming region; and a second island shaped reinforcing film which is formed by covering the first conductive film and the gate insulation film.
