Stacked microelectronic assembly with TSVS formed in stages and carrier above chip

摘要

A microelectronic assembly is provided which includes a first element consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface facing and attached to a major surface of a microelectronic element at which a plurality of conductive pads are exposed, the microelectronic element having active semiconductor devices therein. A first opening extends from an exposed surface of the first element towards the surface attached to the microelectronic element, and a second opening extends from the first opening to a first one of the conductive pads, wherein where the first and second openings meet, interior surfaces of the first and second openings extend at different angles relative to the major surface of the microelectronic element. A conductive element extends within the first and second openings and contacts the at least one conductive pad.

主权项

1. A method of forming a microelectronic assembly, comprising:
(a) attaching a first element consisting essentially of at least one of semiconductor or inorganic dielectric material with a microelectronic element such that a first surface of the first element faces a major surface of the microelectronic element, the microelectronic element having at least one electrically conductive pad having an upper surface exposed at the major surface, the microelectronic element having active semiconductor devices adjacent the major surface; (b) then forming a first conductive element extending through the first element and contacting the upper surface of the at least one conductive pad; and (c) before or after step (b), forming a second conductive element extending through the microelectronic element, the second conductive element contacting the at least one conductive pad or a second conductive pad at the major surface.