SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a transistor formed on a substrate and including a gate electrode and a source/drain, an interlayer insulating layer covering the transistor, a first contact hole formed in the interlayer insulating layer to expose a part of the transistor, a first barrier metal conformally formed on an inner surface of the first contact hole, a first conductive layer formed on the first barrier metal to fill the first contact hole, a second contact hole formed on the first conductive layer in the interlayer insulating layer and having a larger width than the first contact hole, a second barrier metal conformally formed on an inner surface of the second contact hole, and a second conductive layer formed on the second barrier metal to fill the second contact hole, wherein the second barrier metal is formed between the first conductive layer and the second conductive layer.

主权项

1. A semiconductor device, comprising:
a transistor on a substrate, the transistor including a gate electrode and a source/drain; an interlayer insulating layer covering the transistor; a first contact hole in the interlayer insulating layer to expose a part of the transistor; a first barrier metal conformal on an inner surface of the first contact hole; a first conductive layer on the first barrier metal to fill the first contact hole; a second contact hole on the first conductive layer in the interlayer insulating layer and having a larger width than the first contact hole; a second barrier metal conformal on an inner surface of the second contact hole; and a second conductive layer on the second barrier metal to fill the second contact hole, the second barrier metal separating between the first conductive layer and the second conductive layer.