发明名称 |
A METHOD OF FABRICATING A TRANSITION METAL CHALCOGENIDE THIN FILM |
摘要 |
A method to manufacture a transition metal chalcogenide thin film includes: a step of providing a substrate with a transition metal film; a step of forming a chalcogen material of a second molecular structure by evaporating a chalcogen source; a step of forming a chalcogen material of a first molecular structure, including a smaller amount of atoms than the second molecular structure, by dissolving the chalcogen material of the second molecular structure; and a step of providing the chalcogen material of the first molecular structure to the transition metal film. |
申请公布号 |
KR20160017602(A) |
申请公布日期 |
2016.02.16 |
申请号 |
KR20150074205 |
申请日期 |
2015.05.27 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
CHUNG, YONG DUCK;CHO, DAE HYUNG;LEE, WOO JUNG;HAN, WON SEOK |
分类号 |
H01L29/786;H01L21/285 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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