发明名称 A METHOD OF FABRICATING A TRANSITION METAL CHALCOGENIDE THIN FILM
摘要 A method to manufacture a transition metal chalcogenide thin film includes: a step of providing a substrate with a transition metal film; a step of forming a chalcogen material of a second molecular structure by evaporating a chalcogen source; a step of forming a chalcogen material of a first molecular structure, including a smaller amount of atoms than the second molecular structure, by dissolving the chalcogen material of the second molecular structure; and a step of providing the chalcogen material of the first molecular structure to the transition metal film.
申请公布号 KR20160017602(A) 申请公布日期 2016.02.16
申请号 KR20150074205 申请日期 2015.05.27
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 CHUNG, YONG DUCK;CHO, DAE HYUNG;LEE, WOO JUNG;HAN, WON SEOK
分类号 H01L29/786;H01L21/285 主分类号 H01L29/786
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