| 发明名称 | Photodetector using graphene and method of manufacturing the same | ||
| 摘要 | A photodetector using graphene includes: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have π-binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a side of the graphene channel layer, where the first and second sides are opposite to each other, and where the graphene channel layer includes a first graphene layer and a first nanoparticle disposed on the first graphene layer. The first graphene layer may include a single graphene layer, or the first graphene layer may include a plurality of single graphene layers, which is sequentially stacked and does not have π-binding. | ||
| 申请公布号 | US9263607(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201313747920 | 申请日期 | 2013.01.23 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Yoo Won Jong;Li Hua-Min |
| 分类号 | H01L29/06;H01L31/028;H01L31/0232;H01L31/036;H01L31/112;B82Y99/00;B82Y15/00 | 主分类号 | H01L29/06 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
| 主权项 | 1. A photodetector comprising: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have π-binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a second side of the graphene channel layer, wherein the first and second sides are opposite to each other, wherein the graphene channel layer comprises: a first graphene layer; and a first nanoparticle disposed on the first graphene layer. | ||
| 地址 | KR | ||