发明名称 CAPACITANCE TYPE SENSOR, ACOUSTIC SENSOR, AND MICROPHONE
摘要 A chamber that penetrates vertically is formed in a silicon substrate. A diaphragm is arranged on the upper surface of the silicon substrate so as to cover the upper opening of the chamber. The diaphragm is divided by slits into a region located above the chamber (first diaphragm) and a region located above the upper surface of the silicon substrate (second diaphragm). A fixed electrode plate is arranged above the first diaphragm, and a low-volume first acoustic sensing portion is formed by the first diaphragm and the fixed electrode plate. Also, a high-volume second acoustic sensing portion is formed by the second diaphragm and the upper surface (electrically conducting layer) of the silicon substrate.
申请公布号 US2016037266(A1) 申请公布日期 2016.02.04
申请号 US201314772108 申请日期 2013.09.09
申请人 OMRON Corporation 发明人 UCHIDA Yuki
分类号 H04R19/04;G10K11/00;H04R3/06;H04R3/00 主分类号 H04R19/04
代理机构 代理人
主权项 1. A capacitive sensor comprising: a substrate having a cavity that is open at least at an upper surface; a vibrating electrode plate formed above the substrate so as to cover an upper portion of the cavity; a back plate formed above the substrate so as to cover the vibrating electrode plate; and a fixed electrode plate provided on the back plate, wherein the vibrating electrode plate is divided into a region located above the cavity and a region located above an upper surface of the substrate, a first sensing portion is formed by the fixed electrode plate and the region of the vibrating electrode plate located above the cavity, and a second sensing portion is formed by the upper surface of the substrate and the region of the vibrating electrode plate located above the upper surface of the substrate.
地址 Kyoto-shi, Kyoto JP