发明名称 |
CAPACITANCE TYPE SENSOR, ACOUSTIC SENSOR, AND MICROPHONE |
摘要 |
A chamber that penetrates vertically is formed in a silicon substrate. A diaphragm is arranged on the upper surface of the silicon substrate so as to cover the upper opening of the chamber. The diaphragm is divided by slits into a region located above the chamber (first diaphragm) and a region located above the upper surface of the silicon substrate (second diaphragm). A fixed electrode plate is arranged above the first diaphragm, and a low-volume first acoustic sensing portion is formed by the first diaphragm and the fixed electrode plate. Also, a high-volume second acoustic sensing portion is formed by the second diaphragm and the upper surface (electrically conducting layer) of the silicon substrate. |
申请公布号 |
US2016037266(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201314772108 |
申请日期 |
2013.09.09 |
申请人 |
OMRON Corporation |
发明人 |
UCHIDA Yuki |
分类号 |
H04R19/04;G10K11/00;H04R3/06;H04R3/00 |
主分类号 |
H04R19/04 |
代理机构 |
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代理人 |
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主权项 |
1. A capacitive sensor comprising:
a substrate having a cavity that is open at least at an upper surface; a vibrating electrode plate formed above the substrate so as to cover an upper portion of the cavity; a back plate formed above the substrate so as to cover the vibrating electrode plate; and a fixed electrode plate provided on the back plate, wherein the vibrating electrode plate is divided into a region located above the cavity and a region located above an upper surface of the substrate, a first sensing portion is formed by the fixed electrode plate and the region of the vibrating electrode plate located above the cavity, and a second sensing portion is formed by the upper surface of the substrate and the region of the vibrating electrode plate located above the upper surface of the substrate. |
地址 |
Kyoto-shi, Kyoto JP |