METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

According to a technical concept of the present invention, a method for manufacturing a semiconductor device comprises the following steps of: forming a first alignment mark trench in a first material layer on a substrate wherein the first alignment mark trench is used for alignment between layers; forming a first alignment mark via which communicates with the first alignment mark trench by etching a second material layer formed in a lower portion of the first material layer; and forming a trench-via-integrated-type first alignment mark by filling the first alignment mark trench and the first alignment mark via with a light reflection material and etching a front surface including the first material layer and a light reflection material layer.