| 摘要 |
There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1):;
[where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0):
;
Q is formula (5) or formula (6):
;
and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent. |
| 主权项 |
1. A resist underlayer film for EUV lithography obtained by a method comprising:
applying a resist underlayer film-forming composition for EUV lithography comprising a polymer having a repeating unit structure of formula, (1): wherein each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; andX1 is formula (2), formula (3), formula (4) or formula (0): wherein each of R1 and R2 is a hydrogen atom, a halogen atom, a C1-6 alkyl group, a C3-6 alkenyl group, a benzyl group, or a phenyl group,
wherein each of the C1-6 alkyl group, the C3-6 alkenyl group, the benzyl group, and the phenyl group is optionally substituted with a group selected from the group consisting of a C1-6 alkyl group, a halogen atom, a C1-6 alkoxy group, a nitro group, a cyano group, a hydroxy group, a carboxy group, and a C1-6 alkylthio group;R1 and R2 are optionally mutually bonded to form a ring of 3 to 6 carbon atoms;R3 is a halogen atom , a C1-6 alkyl group, a C3-6 alkenyl group, a benzyl group, or a phenyl group,
wherein the phenyl group is optionally substituted with a group selected from the group consisting of a C1-6 alkyl group, a halogen atom, a C1-6 alkoxy group, a nitro group, a cyano group, a hydroxyl group, and a C1-6 alkylithio group; andQ is formula (5) or formula (6): wherein Q1 is a C1-10 alkylene group, a phenylene group, a naphthylene group, or an anthrylene group, where each of the alkylene group,the phenylene group, the naphthylene group, and the anthrylene group is optionally substituted with a C1-6 alkyl group, a C2-7 carbonyloxyalkyl group, a halogen atom, a C1-6 alkoxy group, a phenyl group, a nitro group, a cyano group, a hydroxy group, a C1-6 alkylthio group, a group having a disulfide group, a carboxy group, or a group of a combination of a C1-6 alkyl group, a C2-7 carbonyloxyalkyl group, a halogen atom, a C1-6 alkoxy group, a phenyl group, a nitro group, a cyano group, a hydroxy group, a C1-6 alkylthio group, a group having a disulfide group, and a carboxy group;each of n1 and n2 is the number of 0 or 1; andX2 is formula (2), formula (3), or formula (0); anda solventonto a semiconductor substrate, and
baking the applied resist underlayer film-forming composition, wherein
a film thickness of the resist underlayer film is 1 nm to 20 nm. |
