| 摘要 |
The present invention relates to a photographing device with good productivity and an improved dynamic range. The photographing device includes: a photoelectric conversion element including a p-type semiconductor, an n-type semiconductor, and an i-type semiconductor; and a pixel including a pixel operating circuit. The sum of partial areas of the i-type semiconductor, not overlapped with any one from a semiconductor material and a metal material constituting the pixel operating circuit as viewed from a plane, is advisable to be not less than 65% of the entire area of the i-type semiconductor, more advisable to be not less than 80% thereof, or more advisable to be not less than 90% thereof. Multiple photoelectric conversion elements are provided in the same semiconductor layer, so a process to separate each of the photoelectric conversion elements can be eliminated. The i-type semiconductor layer that each of the photoelectric conversion elements has is separated from each other by the p-type semiconductor or the n-type semiconductor. |
