发明名称 Three-dimensional bicontinuous heterostructures, method of making, and their application in quantum dot-polymer nanocomposite photodetectors and photovoltaics
摘要 The present invention provides of a three-dimensional bicontinuous heterostructure, a method of producing same, and the application of this structure towards the realization of photodetecting and photovoltaic devices working in the visible and the near-infrared. The three-dimensional bicontinuous heterostructure includes two interpenetrating layers which are spatially continuous, they are include only protrusions or peninsulas, and no islands. The method of producing the three-dimensional biocontinuous heterostructure relies on forming an essentially planar continuous bottom layer of a first material; forming a layer of this first material on top of the bottom layer which is textured to produce protrusions for subsequent interpenetration with a second material, coating this second material onto this structure; and forming a final coating with the second material that ensures that only the second material is contacted by subsequent layer. One of the materials includes visible and/or infrared-absorbing semiconducting quantum dot nanoparticles, and one of materials is a hole conductor and the other is an electron conductor.
申请公布号 US9231223(B2) 申请公布日期 2016.01.05
申请号 US201313887895 申请日期 2013.05.06
申请人 InVisage Technologies, Inc. 发明人 Sargent Edward;McDonald Steven Ashworth;Zhang Shiguo;Levina Larissa;Konstantatos Gerasimos;Cyr Paul
分类号 H01L21/00;H01L31/00;H01L51/42;B82Y10/00;H01L31/0352;H01L51/05;H01L27/30;H01L51/00;H01L21/02;B82Y40/00 主分类号 H01L21/00
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A method of producing a light-sensing system on a semiconductor substrate having at least one integrated circuit device defined thereon, the method comprising: forming a nanomaterial having at least one semiconductor quantum dot over the integrated circuit device; and forming a three-dimensional bicontinuous heterostructure including at least two materials, with a first material formed on the semiconductor substrate and a second material located on the first material, the first material and the second material each having a structure that includes protrusions with substantially no islands, the protrusions from the first material penetrate into the second material forming an irregular interpenetrating interface between the first material and the second material.
地址 Menlo Park CA US