发明名称 A SILICON CARBIDE-BASED POROUS BODY AND MANUFACTURING METHOD THEREOF
摘要 <p>There is provided a silicon carbide-based porous body which can avoid excessive temperature elevation when it is used as a filter and the captured particulate matter (PM) is burnt for removal and which is low in strength reduction caused by heat cycle. The silicon carbide-based porous body comprises a plurality of silicon carbide (SiC) particles as an aggregate and a plurality of binding phases which bind the silicon carbide particles to each other, wherein of the binding phases, the phase having the largest volume is either of a Si phase and a phase (a metal silicide phase) made of at least one member selected from the group consisting of a Ti silicide, a Zr silicide, a Mo silicide and a W silicide, all having a linear thermal expansion coefficient at 40 to 800°C, higher than that of Si by at least 3×10 -6 (°C -1 ) and the phase having the next largest volume is the remainder of the Si phase and the metal silicide phase, and the binding phases contain the Si phase by 20 to 80% by volume of the total binding phases.</p>
申请公布号 EP2070889(A2) 申请公布日期 2009.06.17
申请号 EP20080253936 申请日期 2008.12.09
申请人 NGK INSULATORS, LTD. 发明人 KAWAI, MASAAKI
分类号 C04B35/565;C04B35/63;C04B38/00;C04B111/00 主分类号 C04B35/565
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