LIGHT EMITTING DIODE HAVING MODULATION DOPED LAYER

摘要

PURPOSE: A light emitting diode including a modulation doped layer is provided to release a strain generated in an active area by forming the modulation doped layer of a doped InGaN/an un-doped InGaN with identical compositions between a contact layer and the active area. CONSTITUTION: A p-type contact layer(33) is formed on the upper side of an n-type contact layer(27). The active area(29) of a multiple-quantum-well structure is interposed between the p-type contact layer and the n-type contact layer. A modulation doping layer(28) is interposed between the n-type contact layer and the active area. The modulation doping layer is a stacked structure in which a n-type impurity doped InGaN layer(28a) and a un-doped InGaN layer are stacked by turns(28b). The compositions of the doped InGaN layer and the un-doped InGaN layer are same.