发明名称 Light emitting device
摘要 In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting element made of a cathode, an organic compound layer and an anode, a protection film is formed in an interface between the anode that is a light exit electrode and the organic compound layer. The protection film formed on the organic compound layer has transmittance in the range of 70 to 100%, and when the anode is deposited by use of the sputtering method, a sputtering damage to the organic compound layer can be inhibited from being inflicted.
申请公布号 US7592193(B2) 申请公布日期 2009.09.22
申请号 US20050249435 申请日期 2005.10.14
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;KONUMA TOSHIMITSU;YAMAZAKI HIROKO
分类号 H01L21/00;H01L27/32;H01L51/50;H01L51/52 主分类号 H01L21/00
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