PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD

摘要

A plasma etching apparatus (11) is provided with a holding table (14) which holds a semiconductor substrate (W) thereon; a first heater (18a) which heats a region on a center section of the semiconductor substrate (W) held on the holding table (14); a second heater (18b) which heats a region on an end section positioned at the periphery of the center section of the semiconductor substrate (W) held on the holding table (14); a reaction gas supplying section (13)for supplying a reaction gas for plasma processing toward the region on the center section of the semiconductor substrate (W) held on the holding table (14); and a control section (20) which performs plasma etching to the semiconductor substrate (W) by controlling the first and the second heaters (18a, 18b) so that the temperature of the region on the center section and that of the region on the end section of the semiconductor substrate (W) held on the holding table (14) are different from each other.