| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing device that can form a film uniform in film quality and film thickness. <P>SOLUTION: This plasma processing device 1 is equipped with a first electrode 3 provided in a processing chamber 2, a second electrode 4 that is opposite to the first electrode 3 and can hold a substrate 10, an air exhaustion means for evacuating air from within the processing chamber 2, and a gas supply means for supplying gas into the processing chamber 2. The first electrode 3 has protruded parts 41 on the side opposite to the second electrode 4, a gas supply port 42 is formed at the tip of the protruded parts 41 and, with regard to the width of the tips of multiple protruded parts 41 (from 41a to 41e), a protruded part that is located nearer to the edge of the first electrode 3 has a narrower tip than a protruded part that is located near the center of the first electrode 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
