SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same capable of suppressing reduction in withstanding voltage characteristics and improving a response speed.SOLUTION: A MOSFET 1 comprises: a substrate 10 to which a first trench 16 opening toward a main surface 10a side and a second trench 17 opening toward the main surface 10a side and being shallower than the first trench 16 are formed, and which is made of silicon carbide; a gate insulating film 20; a gate electrode 30; and a source electrode 50 arranged so as to contact with a wall surface 17a of the second trench 17. The substrate 10 includes a source region 15, a body region 14, and a drift region 13. The first trench 16 is formed to reach the drift region 13 while penetrating through the source region 15 and the body region 14. The second trench 17 is formed to reach the body region 14 while penetrating through the source region 15.