| 摘要 |
PURPOSE: A silicon single crystal ingot growth device is provided to maintain a constant quality of a silicon single crystal ingot by accurately measuring an increase value of a vertical distance between the lower surface of a heat shield and a silicon melt surface of a crucible. CONSTITUTION: A heat shield (103) is located at the upper side of a crucible (102) in a chamber and surrounds a grown silicon single crystal ingot. A support rotary shaft (104) supports the lower surface of the crucible by passing through the lower surface of the chamber and moves the crucible vertically while rotating. A distance measuring unit (105) faces the surface of a silicon melt of the crucible and measures a vertical distance. The support rotary shaft raises the crucible while rotating the crucible as much as an increase value of the vertical distance measured by the distance measuring unit according to the growth of the silicon single crystal ingot. [Reference numerals] (106) Calculation unit; (107) Driving unit
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