发明名称 |
Circuit with inter-layer vias and intra-layer coupled transistors |
摘要 |
A circuit comprises a first layer comprising a first voltage line, a first transistor coupled with the first voltage line, a second transistor coupled with the first voltage line, and a first line coupling a drain of the first transistor with a gate of the second transistor. The circuit also comprises a second layer comprising a second voltage line, a third transistor coupled with the second voltage line, a fourth transistor coupled with the second voltage line, and a second line coupling a drain of the third transistor with a gate of the fourth transistor. The circuit further comprises an inter-layer interconnect structure coupling the first transistor with the third transistor, and the second transistor with the fourth transistor. |
申请公布号 |
US9209168(B2) |
申请公布日期 |
2015.12.08 |
申请号 |
US201514658613 |
申请日期 |
2015.03.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Lee Jam-Wem |
分类号 |
H01L27/02;H01L27/06;H01L25/11;H01L25/00;H01L27/088;H01L27/092 |
主分类号 |
H01L27/02 |
代理机构 |
Hauptman Ham, LLP |
代理人 |
Hauptman Ham, LLP |
主权项 |
1. A circuit comprising:
a first layer comprising:
a first voltage line;a first transistor coupled with the first voltage line;a second transistor coupled with the first voltage line; anda first line coupling a drain of the first transistor with a gate of the second transistor; a second layer comprising:
a second voltage line;a third transistor coupled with the second voltage line;a fourth transistor coupled with the second voltage line; anda second line coupling a drain of the third transistor with a gate of the fourth transistor, the second line being separate from the first line; and an inter-layer interconnect structure coupling the first transistor with the third transistor, and the second transistor with the fourth transistor. |
地址 |
TW |