发明名称 Circuit with inter-layer vias and intra-layer coupled transistors
摘要 A circuit comprises a first layer comprising a first voltage line, a first transistor coupled with the first voltage line, a second transistor coupled with the first voltage line, and a first line coupling a drain of the first transistor with a gate of the second transistor. The circuit also comprises a second layer comprising a second voltage line, a third transistor coupled with the second voltage line, a fourth transistor coupled with the second voltage line, and a second line coupling a drain of the third transistor with a gate of the fourth transistor. The circuit further comprises an inter-layer interconnect structure coupling the first transistor with the third transistor, and the second transistor with the fourth transistor.
申请公布号 US9209168(B2) 申请公布日期 2015.12.08
申请号 US201514658613 申请日期 2015.03.16
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Lee Jam-Wem
分类号 H01L27/02;H01L27/06;H01L25/11;H01L25/00;H01L27/088;H01L27/092 主分类号 H01L27/02
代理机构 Hauptman Ham, LLP 代理人 Hauptman Ham, LLP
主权项 1. A circuit comprising: a first layer comprising: a first voltage line;a first transistor coupled with the first voltage line;a second transistor coupled with the first voltage line; anda first line coupling a drain of the first transistor with a gate of the second transistor; a second layer comprising: a second voltage line;a third transistor coupled with the second voltage line;a fourth transistor coupled with the second voltage line; anda second line coupling a drain of the third transistor with a gate of the fourth transistor, the second line being separate from the first line; and an inter-layer interconnect structure coupling the first transistor with the third transistor, and the second transistor with the fourth transistor.
地址 TW
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