发明名称 |
Methods of forming under device interconnect structures |
摘要 |
Methods of forming microelectronic interconnect under device structures are described. Those methods and structures may include forming a device layer in a first substrate, forming at least one routing layer in a second substrate, and then coupling the first substrate with the second substrate, wherein the first substrate is bonded to the second substrate. |
申请公布号 |
GB2526458(A) |
申请公布日期 |
2015.11.25 |
申请号 |
GB20150013906 |
申请日期 |
2014.03.13 |
申请人 |
INTEL CORPORATION |
发明人 |
DON NELSON;M.,CLAIR WEBB;KIMIN JUN;II-SEOK SON |
分类号 |
H01L21/20;H01L21/74;H01L23/522;H01L23/535 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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